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IMW120R220M1H

Infineon
Part Number IMW120R220M1H
Manufacturer Infineon
Description Silicon Carbide MOSFET
Published Jul 2, 2020
Detailed Description IMW120R220M1H IMW120R220M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching los...
Datasheet PDF File IMW120R220M1H PDF File

IMW120R220M1H
IMW120R220M1H

Overview
IMW120R220M1H IMW120R220M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses Gate pin 1  Threshold-free on state characteristic  Wide gate-source voltage range  Benchmark gate threshold voltage, VGS(th) = 4.
5V  0V turn-off gate voltage for easy and simple gate drive  Fully controllable dV/dt  Robust body diode for hard commutation  Temperature independent turn-off switching losses Benefits  Efficiency improvement  Enabling higher frequency  Increased power density  Cooling effort reduction  Reduction of system complexity and cost Potential applications  Energy generation o Solar string inverter and solar optimizer  Indus...


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