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RBR3LAM30ATF
Part Number
RBR3LAM30ATF
Manufacturer
ROHM
Description
Schottky Barrier Diode
Published
Jul 3, 2020
Detailed Description
RBR3LAM30ATF Schottky Barrier Diode (AEC-Q101 qualified) Data sheet ...
Datasheet
RBR3LAM30ATF
PDF File
Overview
RBR3LAM30ATF
Schottky
Barrier Diode (AEC-Q101 qualified) Data sheet ●Outline VR 30 V Io 3 A IFSM 40 A ●Features High reliability Small power mold type Low VF ●Inner Circuit ●Application ●Packaging Specifications General rectification Packing Embossed Tape Reel Size(mm) 180 ●Structure Taping Width(mm) 12 Quantity(pcs) 3000 Silicon epitaxial planar Taping Code TR Marking C8 ●Absolute Maximum Ratings (Tc=25ºC unless otherwise specified) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage Reverse voltage Average rectified forward current VRM Duty≦0.
5 30 V VR Reverse direct voltage 30 V Glass epoxy mounted、 Io 60Hz half sin waveform、resistive load、 3 A Tc=105℃ Max.
Peak forward surge current IFSM 60Hz half sin waveform、Non-repetitive、 one cycle、Ta=25℃ 40 A Junction temperature(1) Tj - Storage temperature Tstg - Note(1) To avoid occurrence of thermal runaway, actual board is to be designed to fulfill dPd/dTj<1/Rth(j-a).
150 ℃ -55 ~ 150 ℃ ●Characteristics (Tj=25ºC unless otherwise specified) Parameter Symbol Conditions Min.
Typ.
Max.
Unit Forward voltage Reverse current VF IF=3A - - 0.
58 V IR VR=30V - - 50 μA Attention www.
rohm.
com © 2016- ROHMCo.
, Ltd.
All rights reserved.
1/5 2019/05/28_Rev.
002 RBR3LAM30ATF ●Characteristic Curves Data sheet www.
rohm.
com © 2016 ROHMCo.
, Ltd.
All rights reserved.
2/5 2019/05/28_Rev.
002 RBR3LAM30ATF ●Characteristic Curves Data sheet www.
rohm.
com © 2016 ROHMCo.
, Ltd.
All rights reserved.
3/5 2019/05/28_Rev.
002 RBR3LAM30ATF ●Characteristic Curves...
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