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PMBFJ109

NXP
Part Number PMBFJ109
Manufacturer NXP
Description N-channel FET
Published Jul 10, 2020
Detailed Description SOT23 PMBFJ108; PMBFJ109; PMBFJ110 N-channel junction FETs Rev. 4 — 20 September 2011 Product data sheet 1. Product...
Datasheet PDF File PMBFJ109 PDF File

PMBFJ109
PMBFJ109

Overview
SOT23 PMBFJ108; PMBFJ109; PMBFJ110 N-channel junction FETs Rev.
4 — 20 September 2011 Product data sheet 1.
Product profile 1.
1 General description Symmetrical N-channel junction FETs in a SOT23 package.
1.
2 Features and benefits  High-speed switching  Interchangeability of drain and source connections  Low RDSon at zero gate voltage (8  for PMBFJ108).
1.
3 Applications  Analog switches  Choppers and commutators  Audio amplifiers.
2.
Pinning information Table 1.
Pin 1 2 3 Pinning Description[1] drain source gate Simplified outline 3 Symbol 1 2 1 3 2 sym053 [1] Drain and source are interchangeable.
NXP Semiconductors PMBFJ108; PMBFJ109; PMBFJ110 N-channel junction FETs 3.
Ordering information Table 2.
Ordering information Type number Package Name Description PMBFJ108 - plastic surface mounted package; 3 leads PMBFJ109 PMBFJ110 Version SOT23 4.
Marking Table 3.
Marking Type number PMBFJ108 PMBFJ109 PMBFJ110 [1] * = p: Made in Hong Kong * = t: Made in Malaysia * = W: Made in China 5.
Limiting values Marking code[1] 38* 39* 40* Table 4.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min VDS drain-source voltage (DC) - VGSO gate-source voltage - VGDO gate-drain voltage - IG forward gate current (DC) Ptot total power dissipation Tstg storage temperature Tamb = 25 C [1] - 65 Tj junction temperature - [1] Mounted on an FR4 printed-circuit board.
Max Unit 25 V 25 V 25 V 50 mA 250 mW +150 C 150 C 6.
Thermal characteristics Table 5.
Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient [1] Mounted on an FR4 printed-circuit board.
Typ [1] 500 Unit K/W PMBFJ108_109_110 Product data sheet All information provided in this document is subject to legal disclaimers.
Rev.
4 — 20 September 2011 © NXP B.
V.
2011.
All rights reserved.
2 of 9 NXP Semiconductors PMBFJ108; PMBFJ109; P...


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