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MRF6S21140HSR3

Part Number	MRF6S21140HSR3
Manufacturer	NXP
Description	RF Power FET
Published	Jul 10, 2020
Detailed Description	Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs De...
Datasheet	MRF6S21140HSR3 PDF File

Overview

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA base station applications with frequencies from 2110 to 2170 MHz.
Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN--PCS/cellular radio and WLL applications.
• Typical 2--carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 30 Watts Avg.
, f = 2112.
5 MHz, Channel Bandwidth = 3.
84 MHz, PAR = 8.
5 dB @ 0.
01% Probability on CCDF.
Power Gain — 15.
5 dB Drain Efficiency — 27.
5% IM3 @ 10 MHz Offset — --37 dBc in 3.
84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — --41 dBc in 3.
84 MHz Channel Bandwidth • Capa...

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MRF6S21140HSR3 RF Power FET - NXP

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