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MRF6VP11KGSR5

Part Number	MRF6VP11KGSR5
Manufacturer	NXP
Description	RF Power FET
Published	Jul 10, 2020
Detailed Description	Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs De...
Datasheet	MRF6VP11KGSR5 PDF File

Overview

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for pulse wideband applications with frequencies up to 150 MHz.
Devices are unmatched and are suitable for use in industrial, medical and scientific applications.
• Typical Pulse Performance at 130 MHz: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (200 W Avg.
), Pulse Width = 100 μsec, Duty Cycle = 20% Power Gain — 26 dB Drain Efficiency — 71% • Capable of Handling 10:1 VSWR, @ 50 Vdc, 130 MHz, 1000 Watts Peak Power Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • CW Operation Capability with Adequate Cooling • Qua...

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MRF6VP11KGSR5 RF Power FET - NXP

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