DatasheetsPDF.com

AFT05MS003N

NXP
Part Number AFT05MS003N
Manufacturer NXP
Description RF Power LDMOS Transistor
Published Jul 13, 2020
Detailed Description Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral M...
Datasheet PDF File AFT05MS003N PDF File

AFT05MS003N
AFT05MS003N


Overview
Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET Designed for handheld two--way radio applications with frequencies from 1.
8 to 941 MHz.
The high gain, ruggedness and wideband performance of this device make it ideal for large--signal, common--source amplifier applications in handheld radio equipment.
Wideband Performance (7.
5 Vdc, TA = 25C, CW) Frequency Pin Gps D Pout (MHz) (dBm) (dB) (%) (W) 136–174 (1,4) 17.
8 17.
1 67.
1 3.
2 350–520 (2,4) 20.
0 15.
1 73.
0 3.
2 Narrowband Performance (7.
5 Vdc, TA = 25C, CW) Frequency (MHz) Gps D Pout (dB) (%) (W) 520 (3) 20.
8 68.
3 3.
0 Load Mismatch/Ruggedness Frequency Signal (MHz) Type VSWR Pin (dBm) Test Voltage Result 520 (3) CW > 65:1 at all Phase Angles 21.
1 9.
0 No Device Degradation 1.
Measured in 136–174 MHz VHF broadband reference circuit.
2.
Measured in 350–520 MHz UHF broadband reference circuit.
3.
Measured in 520 MHz narrowband production test circuit.
4.
The values shown are the center band performance numbers across the indicated frequency range.
Features  Characterized for Operation from 1.
8 to 941 MHz  Unmatched Input and Output Allowing Wide Frequency Range Utilization  Integrated ESD Protection  Integrated Stability Enhancements  Wideband — Full Power Across the Band  Exceptional Thermal Performance  Extreme Ruggedness Typical Applications  Output Stage VHF Band Handheld Radio  Output Stage UHF Band Handheld Radio  Output Stage for 700–900 MHz Handheld Radio  Smart Metering  Driver for 1.
8–941 MHz Applications Document Number: AFT05MS003N Rev.
0, 8/2015 AFT05MS003N 1.
8–941 MHz, 3 W, 7.
5 V WIDEBAND AIRFAST RF POWER LDMOS TRANSISTOR SOT--89 Source 2 123 Gate Source Drain Figure 1.
Pin Connections  Freescale Semiconductor, Inc.
, 2015.
All rights reserved.
RF Device Data Freescale Semiconductor, Inc.
AFT05MS003N 1 Table 1.
Maximum Ratings Rating Drain--Source Voltage Gate--So...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)