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A2I09VD015NR1

NXP
Part Number A2I09VD015NR1
Manufacturer NXP
Description Power Amplifiers
Published Jul 13, 2020
Detailed Description NXP Semiconductors Technical Data Document Number: A2I09VD015N Rev. 0, 06/2018 RF LDMOS Wideband Integrated Power Ampl...
Datasheet PDF File A2I09VD015NR1 PDF File

A2I09VD015NR1
A2I09VD015NR1

Overview
NXP Semiconductors Technical Data Document Number: A2I09VD015N Rev.
0, 06/2018 RF LDMOS Wideband Integrated Power Amplifiers The A2I09VD015N wideband integrated circuit is designed with on--chip matching that makes it usable from 575 to 960 MHz.
This multi -- stage structure is rated for 48 to 55 V operation and covers all typical cellular base station modulation formats.
900 MHz  Typical Single--Carrier W--CDMA Characterization Performance: VDD = 48 Vdc, IDQ1(A+B) = 16 mA, IDQ2(A+B) = 84 mA, Pout = 2 W Avg.
, Input Signal PAR = 9.
9 dB @ 0.
01% Probability on CCDF.
(1) Frequency Gps (dB) PAE (%) ACPR (dBc) 920 MHz 940 MHz 960 MHz 32.
9 19.
3 –45.
9 33.
0 19.
7 –45.
5 32.
8 19.
6 –44.
9 Features  On--chip matching (50 ohm input, DC blocked)  Integrated quiescent current temperature compensation with enable/disable function (2)  Designed for digital predistortion error correction systems  Optimized for Doherty applications A2I09VD015NR1 A2I09VD015GNR1 575–960 MHz, 2 W AVG.
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