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AFM906N

NXP
Part Number AFM906N
Manufacturer NXP
Description RF Power LDMOS Transistor
Published Jul 13, 2020
Detailed Description NXP Semiconductors Technical Data RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET...
Datasheet PDF File AFM906N PDF File

AFM906N
AFM906N

Overview
NXP Semiconductors Technical Data RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET Designed for handheld two--way radio applications with frequencies from 136 to 941 MHz.
The high gain, ruggedness and wideband performance of this device make it ideal for large--signal, common--source amplifier applications in handheld radio equipment.
Wideband Performance (In 440–520 MHz reference circuit, 7.
5 Vdc, TA = 25C, CW) Frequency Pin Gps D Pout (MHz) (W) (dB) (%) (W) 440–520 (1,2) 0.
16 16.
2 62.
0 6.
5 Narrowband Performance (7.
5 Vdc, TA = 25C, CW) Frequency (MHz) Gps D Pout (B) (%) (W) 520 (3) 20.
3 70.
8 6.
8 Load Mismatch/Ruggedness Frequency Signal (MHz) Type VSWR Pin (dBm) Test Voltage Result 520 (3) CW > 65:1 at all 21 Phase Angles (3 dB Overdrive) 10.
8 No Device Degradation 1.
Measured in 440–520 MHz broadband reference circuit (page 6).
2.
The values shown are the minimum measured performance numbers across ...


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