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A2G35S200-01SR3

Part Number	A2G35S200-01SR3
Manufacturer	NXP
Description	RF Power GaN Transistor
Published	Jul 14, 2020
Detailed Description	Freescale Semiconductor Technical Data Document Number: A2G35S200--01S Rev. 0, 5/2016 RF Power GaN Transistor This 40...
Datasheet	A2G35S200-01SR3 PDF File

Overview

Freescale Semiconductor Technical Data Document Number: A2G35S200--01S Rev.
0, 5/2016 RF Power GaN Transistor This 40 W RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth covering the frequency range of 3400 to 3600 MHz.
This part is characterized and performance is guaranteed for applications operating in the 3400 to 3600 MHz band.
There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
3500 MHz  Typical Single--Carrier W--CDMA Performance: VDD = 48 Vdc, IDQ = 291 mA, Pout = 40 W Avg.
, Input Signal PAR = 9.
9 dB @ 0.
01% Probability on CCDF.
Frequency Gps (dB) ...

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A2G35S200-01SR3 RF Power GaN Transistor - NXP

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