MCC R
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
% !"#
Features
• High density cell design for ultra low RDS(ON) • Fully characterized avalanche voltage and current • Excellent package for good heat dissipation
• Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1
• Halogen free available upon request by adding suffix "-HF"
Maximum Ratings @ 25oC Unless Otherwise Specified
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(note1) Power Dissipation Junction Temperature Storage Temperature Range
Symbol VDS VGS ID IDM Pd TJ TSTG
Value -100 ±20 -6 -30 1. 25 150
-55 ~+150
Unit V V A A W ℃ ℃
EQUIVALENT CIRCUIT
MCT06P10
P-Channel Power MOSFET
SOT-223
4
1
2
3
1. GATE 2&4. DRAIN 3. SOURCE
INCHES
DIM
MIN
A
. 248
MAX . 264
B
. 130
. 146
C
. 264
. 287
D
. 001
. 004
E
. 114
. 122
F
. 091
G
---
. 071
H
. 009
. 014
J
. 030
---
MM
MIN
MAX
6. 30
6. 70
3. 30
3. 70
6. 70
7. 30
0. 02
0. 10
2. 90
3. 10
2. 30
---
1. 80
0. 23
0. 35
0. 75
---
NOTE
Revision: A
www. mccsemi . com
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2017/05/25
MCC R
Micro Commercial Components
MOSFET ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current
On Characteristics Gate Threshold Voltage Drain-Source On-State Resistance Drain-Source On-State Resistance Forward Transconductance
Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics Diode Forward Voltage Diode Forward Current
Reverse Recovery Time Reverse Reco...