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SMS3400Y-C

SeCoS
Part Number SMS3400Y-C
Manufacturer SeCoS
Description N-CHANNEL MOSFET
Published Aug 3, 2020
Detailed Description Elektronische Bauelemente SMS3400Y-C 5.6A , 30V , RDS(O ) 27mΩ -Channel Enhancement Mode Power MOSFET RoHS Compliant P...
Datasheet PDF File SMS3400Y-C PDF File

SMS3400Y-C
SMS3400Y-C

Overview
Elektronische Bauelemente SMS3400Y-C 5.
6A , 30V , RDS(O ) 27mΩ -Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SMS3400Y-C provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SOT-23 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
FEATURES Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic MARKING 3400.
SOT-23 A L 3 Top View CB 1 1 2 K E D F G H 3 2 J REF.
A B C D E F Millimeter Min.
Max.
2.
70 3.
10 2.
10 3.
00 1.
20 1.
80 0.
89 1.
3 1.
70 2.
3 0.
30 0.
50 REF.
G H J K L Millimeter Min.
Max.
0 0.
18 0.
55 REF.
0.
08 0.
26 0.
6 REF.
0.
95 BSC.
PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7 inch ORDER INFORMATION Part Number Type SMS3400Y-C Lead (Pb)-free and Halogen-free ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @Steady State Pulsed Drain Current 1 TA=25°C TA=70°C Maximum Power Dissipation TA=25°C Thermal Resistance Junction-Ambient 2 @Steady State Operating Junction & Storage Temperature VDS VGS ID IDM PD RθJA TJ, TSTG Rating 30 ±12 5.
6 4.
5 23 1.
2 104 150, -55~150 Unit V V A A W °C / W °C http://www.
SeCoSGmbH.
com/ 16-Sep-2019 Rev.
A Any changes of specification will not be informed individually.
Page 1 of 4 Elektronische Bauelemente SMS3400Y-C 5.
6A , 30V , RDS(O ) 27mΩ -Channel Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min.
Typ.
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current V(BR)DSS 30 - VGS(th) 0.
65 - IGSS - - IDSS - - - 21 Static Drain-Source On-Resistance RDS(ON) - 25 - 33 ...


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