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SMS3024A-C

SeCoS
Part Number SMS3024A-C
Manufacturer SeCoS
Description N-CHANNEL MOSFET
Published Aug 3, 2020
Detailed Description Elektronische Bauelemente SMS3024A-C 4.5A , 30V , RDS(O ) 30mΩ -Channel Enhancement Mode Power MOSFET RoHS Compliant P...
Datasheet PDF File SMS3024A-C PDF File

SMS3024A-C
SMS3024A-C


Overview
Elektronische Bauelemente SMS3024A-C 4.
5A , 30V , RDS(O ) 30mΩ -Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SMS3024A-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the small power switching and load switch applications.
The SMS3024A-C meet the RoHS and Green Product requirement with full function reliability approved.
FEATURES Advanced high cell density Trench technology Super Low Gate Charge Green Device Available MARKING 3024A PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7 inch SOT-23 A L 3 Top View C B 1 2 K E 3 1 2 D F G H J REF.
A B C D E F Millimeter Min.
Max.
2.
80 3.
00 2.
25 2.
55 1.
20 1.
40 0.
90 1.
15 1.
80 2.
0 0.
30 0.
50 REF.
G H J K L Millimeter Min.
Max.
0 0.
10 0.
55 REF 0.
80 0.
15 0.
6 REF.
0.
95TYP ORDER INFORMATION Part Number Type SMS3024A-C Lead (Pb)-free and Halogen-free ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current 1 @VGS=10V TA=25°C ID TA=70°C Pulsed Drain Current 3 IDM Total Power Dissipation TA=25°C PD Operating Junction & Storage Temperature Range TJ, TSTG Thermal Resistance Ratings Thermal Resistance Junction-Ambient 1 RθJA Thermal Resistance Junction-Ambient 2 Rating 30 ±20 4.
5 3.
6 30 1 -55~150 t≦5sec, 125 Steady State, 250 313 Unit V V A A W °C °C / W http://www.
SeCoSGmbH.
com/ 12-Nov-2019 Rev.
A Any changes of specification will not be informed individually.
Page 1 of 4 Elektronische Bauelemente SMS3024A-C 4.
5A , 30V , RDS(O ) 30mΩ -Channel Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min.
Typ.
Max.
Drain-Source Breakdown Voltage V(BR)DSS 30 - - Gate-Threshold Voltage Gate-Source Leakage Current VGS(th) 1 IGSS - - 2.
5 - ±10...


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