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SMS318Y-C

SeCoS
Part Number SMS318Y-C
Manufacturer SeCoS
Description N-Channel MOSFET
Published Aug 3, 2020
Detailed Description Elektronische Bauelemente SMS318Y-C 340mA, 50V, RDS(ON) 2.5 N-Channel Enhancement Mode Power MOSFET RoHS Compliant Pr...
Datasheet PDF File SMS318Y-C PDF File

SMS318Y-C
SMS318Y-C

Overview
Elektronische Bauelemente SMS318Y-C 340mA, 50V, RDS(ON) 2.
5 N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SMS318Y-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the small power switching and load switch applications.
The SMS318Y-C meet the RoHS and Green Product requirement with full function reliability approved.
SOT-23 FEATURES  Advanced High Cell Density Trench Technology  Voltage Controlled Small Signal Switch  Low Input Capacitance  Fast Switching Speed  Low Input / Output Leakage MARKING SS.
PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7 inch REF.
A B C D E F Millimeter Min.
Max.
2.
65 3.
10 2.
10 3.
00 1.
10 1.
80 0.
89 1.
40 1.
70 2.
30 0.
28 0.
55 REF.
G H J K L Millimeter Min.
Max.
0 0.
18 0.
55 REF.
0.
08 0.
26 0.
60 REF.
0.
95 TYP.
ORDER INFORMATION Part Number Type SMS318Y-C Lead (Pb)-free and Halogen-free ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current @VGS=10V ID TA=70°C Pulsed Drain Current 1 IDM Total Power Dissipation TA=25°C PD Operating Junction & Storage Temperature Range TJ, TSTG Thermal Resistance Ratings Thermal Resistance Junction-Ambient 2 RθJA Rating 50 ±20 340 272 1.
5 350 -55~150 Steady State, 357 Unit V V mA A mW °C °C/W http://www.
SeCoSGmbH.
com/ 11-Nov-2021 Rev.
B Any changes of specification will not be informed individually.
Page 1 of 3 Elektronische Bauelemente SMS318Y-C 340mA, 50V, RDS(ON) 2.
5 N-Channel Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified) Parameter Symbol Min.
Typ.
Max.
Drain-Source Breakdown Voltage V(BR)DSS 50 - - Gate-Threshold Voltage VGS(th) 0.
8 - 1.
6 Gate-Source Leakage Current - - ±100 IGSS - - ±50 Drain-Source Leaka...


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