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SCP60N03S-C

SeCoS
Part Number SCP60N03S-C
Manufacturer SeCoS
Description N-Channel MOSFET
Published Aug 3, 2020
Detailed Description Elektronische Bauelemente SCP60N03S-C 60A, 30V, RDS(ON) 4.2mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant P...
Datasheet PDF File SCP60N03S-C PDF File

SCP60N03S-C
SCP60N03S-C

Overview
Elektronische Bauelemente SCP60N03S-C 60A, 30V, RDS(ON) 4.
2mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SCP60N03S-C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
DFN3x3-8J FEATURES High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Special processing technology for high ESD capability APPLICATIONS Hard Switched and High Frequency Circuits SMPS and general purpose applications MARKING CJAB 60N03 = Production Line Indication PACKAGE INFORMATION Package MPQ DFN3x3-8J 5K Leader Size 13 inch ORDER INFORMATION Part Number Type SCP60N03S-C Lead (Pb)-free and Halogen-free ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current 1 VGS TC=25°C ID Pulsed Drain Current IDM Single Pulse Avalanche Energy 2 EAS Power Dissipation TA=25°C PD TC=25°C Thermal Resistance from Junction to Ambient 1 RθJA Thermal Resistance from Junction to Case 1 RθJC Lead Temperature for Soldering Purposes @1/8’’ from case for 10s TL Junction and Storage Temperature Range TJ, TSTG http://www.
SeCoSGmbH.
com/ 06-May-2020 Rev.
C REF.
A B C D E F Millimeter Min.
Max.
3.
2 3.
4 3 3.
2 3.
25 3.
45 3 3.
2 0.
65BSC.
2.
39 2.
59 REF.
G H I J K L Millimeter Min.
Max.
1.
78 1.
98 0.
25 0.
35 0.
35TYP.
0.
6TYP.
0.
1 0.
25 0.
7 0.
8 S D S D S D G D Rating 30 ±20 60 240 420 3 34.
7 41.
67 3.
6 260 150, -55~150 Unit V V A A mJ W °C/W °C °C Any changes of specification will not be informed individually.
Page 1 of 3 Elektronische Bauelemente SCP60N03S-C 60A, 30V, RDS(ON) 4.
2mΩ N-Channel Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise sp...


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