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SSD30N10J

SeCoS
Part Number SSD30N10J
Manufacturer SeCoS
Description N-Channel MOSFET
Published Aug 3, 2020
Detailed Description Elektronische Bauelemente SSD30N10J 30A, 100V, RDS(ON) 31mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product ...
Datasheet PDF File SSD30N10J PDF File

SSD30N10J
SSD30N10J

Overview
Elektronische Bauelemente SSD30N10J 30A, 100V, RDS(ON) 31mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION SSD30N10J is designed to stand high energy in the avalanche mode and switch efficiently.
It also offers a drain-to-source diode fast recovery time.
It is designed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.
TO-252(D-Pack) FEATURES High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation A B C D GE MARKING CJU30N10 = Date Code PACKAGE INFORMATION Package MPQ TO-252 2.
5K Leader Size 13 inch ORDER INFORMATION Part Number Type SSD30N10J Lead (Pb)-free SSD30N10J-C Lead (Pb)-free and Halogen-free ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current ID Pulsed Drain Current IDM Single Pulse Avalanche Energy 1 EAS Power Dissipation Lead Temperature for Soldering Purposes @1/8’’ from case for 10s Operating Junction & Storage Temperature Range PD TL TJ, TSTG Thermal Resistance Ratings Thermal Resistance Junction-Ambient RθJA http://www.
SeCoSGmbH.
com/ 29-Apr-2020 Rev.
A K HF N O P M J REF.
Millimeter Min.
Max.
REF.
Millimeter Min.
Max.
A 6.
30 6.
90 J 2.
30 REF.
B 4.
95 5.
53 K 0.
89 REF.
C 2.
10 2.
50 M 0.
45 1.
14 D 0.
40 0.
90 N 1.
55 TYP.
E 6 7.
70 O 0 0.
15 F 2.
90 REF P 0.
58 REF.
G 5.
40 6.
40 H 0.
60 1.
20 2 Drain 1 Gate 3 Source Ratings 100 ±20 30 120 156 1.
25 260 150, -55~150 Unit V V A A mJ W °C 100 °C/W Any changes of specification will not be informed individually.
Page 1 of 3 Elektronische Bauelemente SSD30N10J 30A, 100V, RDS(ON) 31mΩ N-Ch Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Pa...


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