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HWL34YRF

Hexawave
Part Number HWL34YRF
Manufacturer Hexawave
Description L-Band GaAs Power FET
Published Aug 3, 2020
Detailed Description Features • Low Cost GaAs Power FET • Class A or Class AB Operation • Greater than 14.5 dB Gain • 5V to 10V Operation Des...
Datasheet PDF File HWL34YRF PDF File

HWL34YRF
HWL34YRF

Overview
Features • Low Cost GaAs Power FET • Class A or Class AB Operation • Greater than 14.
5 dB Gain • 5V to 10V Operation Description The HWL34YRF is a Power GaAs FET designed for various L-band & S-band applications.
It is presently offered in low cost ceramic package.
Absolute Maximum Ratings VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current IG Gate Current TCH Channel Temperature TSTG Storage Temperature PT* Power Dissipation * mounted on an infinite heat sink.
+15V -5V IDSS 6mA 175°C -65 to +175°C 12W HWL34YRF L-Band GaAs Power FET Autumn 2002 V1 RF Package (Ceramic) Outline Dimensions Electrical Specifications (TA=25°C) f = 2400 MHz for all RF Tests Symbol Parame...


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