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UPD48011318

Part Number	UPD48011318
Manufacturer	Renesas
Description	Low Latency DRAM
Published	Aug 5, 2020
Detailed Description	μPD48011318 μPD48011336 1.1G-BIT Low Latency DRAM-III Common I/O Burst Length of 2 Datasheet R10DS0012EJ0200 Rev.2.00 F...
Datasheet	UPD48011318 PDF File

Overview

μPD48011318 μPD48011336 1.
1G-BIT Low Latency DRAM-III Common I/O Burst Length of 2 Datasheet R10DS0012EJ0200 Rev.
2.
00 Feb 01, 2013 Description The μPD48011318 is a 67,108,864-word by 18-bit and the μPD48011336 is a 33,554,432-word by 36-bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor eDRAM memory cell.
The Low Latency DRAM-III chip is a 1.
1Gbit DRAM capable of a sustained throughput of approximately 43.
2 Gbps for burst length of 2 (approximately 51.
2 Gbps for applications implementing error correction), excluding refresh overhead and data bus turn-around With a bus speed of 600 MHz, a burst length of 2, and a tRC of 13.
3 ns, th...

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