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HAF1010RJ

Renesas
Part Number HAF1010RJ
Manufacturer Renesas
Description P-Channel MOSFET
Published Aug 5, 2020
Detailed Description Target Specifications Datasheet HAF1010RJ Silicon P Channel MOS FET Series Power Switching R07DS1361EJ0200 Rev.2.00 Se...
Datasheet PDF File HAF1010RJ PDF File

HAF1010RJ
HAF1010RJ

Overview
Target Specifications Datasheet HAF1010RJ Silicon P Channel MOS FET Series Power Switching R07DS1361EJ0200 Rev.
2.
00 Sep 06, 2016 Description This FET has the over temperature shut-down capability sensing to the junction temperature.
This FET has the built-in over temperature shut-down circuit in the gate area.
And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
.
Features Logic level operation to (–4 to –6 V Gate drive) Built-in the over temperature shut-down circuit High endurance capability against to the shut-down circuit Latch type shut down operation (need 0 voltage recovery) Built-in the current limitation circuit.
High density mounting Power supply voltage applies 12 V and 24 V.
Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8)) 8 7 65 5678 DDDD 1 234 4 G Gate Resistor Current Limitation Circuit Temperature Sensing Circuit Latch Circuit Gate Shut-down Circuit 1, 2, 3 4 5, 6, 7, 8 Source Gate Drain Absolute Maximum Ratings SSS 123 Item Symbol Ratings Drain to source voltage VDSS –60 Gate to source voltage VGSS –16 Gate to source voltage VGSS 2.
5 Drain current ID –5 Drain peak current ID (pulse) Note1 –10 Body-drain diode reverse drain current IDR –5 Cannel dissipation Pch Note2 2.
5 Cannel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1.
PW  10 s, duty cycle  1% 2.
When using the glass epoxy board (FR4 40 x 40 x 1.
6 mm), PW ≤ 10s R07DS1361EJ0200 Rev.
2.
00 Sep 06, 2016 (Ta = 25°C) Unit V V V A A A W C C Page 1 of 6 HAF1010RJ Typical Operation Characteristics Item Input voltage Input current (Gate non shut down) Input current (Gate shut down) Shut down temperature Gate operation voltage Symbol VIH VIL IIH1 IIH2 IIL IIH(sd)1 IIH(sd)2 Tsd Vop Min –3.
5 — — — — — — — –3.
5 Typ — — — — — –0.
8 –0.
35 175 — Max — –1.
2 –100 –50 –1 — — — –12 Target Specifications Unit V V A A ...


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