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NP20P06YLG

Renesas
Part Number NP20P06YLG
Manufacturer Renesas
Description N-Channel Power MOSFET
Published Aug 6, 2020
Detailed Description Preliminary Data Sheet NP20P06YLG MOS FIELD EFFECT TRANSISTOR R07DS0706EJ0100 Rev.1.00 Apr 17, 2012 Description The N...
Datasheet PDF File NP20P06YLG PDF File

NP20P06YLG
NP20P06YLG

Overview
Preliminary Data Sheet NP20P06YLG MOS FIELD EFFECT TRANSISTOR R07DS0706EJ0100 Rev.
1.
00 Apr 17, 2012 Description The NP20P06YLG is P-channel MOS Field Effect Transistor designed for high current switching applications.
Features  Low on-state resistance RDS(on) = 47 m MAX.
(VGS = –10 V, ID = –10 A) RDS(on) = 64 m MAX.
(VGS = –5 V, ID = –10 A) RDS(on) = 70 m MAX.
(VGS = –4.
5 V, ID = –10 A)  Logic level drive type  Gate to Source ESD protection diode built in  Designed for automotive application and AEC-Q101 qualified Ordering Information Part No.
NP20P06YLG-E1-AY *1 NP20P06YLG-E2-AY *1 Lead Plating Pure Sn (Tin) Packing Tape 2500 p/reel Taping (E1 type) Taping (E2 type) Note: *1 Pb-free (This product does not contain Pb in the external electrode) Package 8-pin HSON Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) *1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) *2 Channel Temperature Storage Temperature Single Avalanche Current *3 Single Avalanche Energy *3 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS Ratings –60 20 20 60 57 1.
0 175 –55 to +175 17 29 Unit V V A A W W °C °C A mJ Thermal Resistance Channel to Case Thermal Resistance Rth(ch-C) Channel to Ambient Thermal Resistance *2 Rth(ch-A) 2.
63 °C/W 150 °C/W Notes: *1 TC = 25°C, PW  10 s, Duty Cycle  1% *2 Mounted on glass epoxy substrate of 40 mm  40 mm  1.
6 mmt with 4% copper area (35 m) *3 Tch(start) = 25°C, VDD = –30 V, RG = 25 , L = 100 H, VGS = –20 V  0 V R07DS0706EJ0100 Rev.
1.
00 Apr 17, 2012 Page 1 of 6 NP20P06YLG Electrical Characteristics (TA = 25°C) Item Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance *1 Drain to Source On-state Resistance *1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-of...


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