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BM60213FV-C

Part Number	BM60213FV-C
Manufacturer	ROHM
Description	High and Low Side Driver
Published	Aug 9, 2020
Detailed Description	Datasheet 1200 V High Voltage High and Low Side Driver BM60213FV-C General Description The BM60213FV-C is high and lo...
Datasheet	BM60213FV-C PDF File

Overview

Datasheet 1200 V High Voltage High and Low Side Driver BM60213FV-C General Description The BM60213FV-C is high and low side drive IC which operates up to 1200 V with bootstrap operation, which can drive N-channel power MOSFET and IGBT.
Under-voltage Lockout (UVLO) function is built-in.
Key Specifications  High-Side Floating Supply Voltage:  Maximum Gate Drive Voltage:  Turn ON/OFF Time:  Logic Input Minimum Pulse Width: 1200 V 24 V 75 ns (Max) 60 ns (Max) Features  AEC-Q100 Qualified(Note 1)  High-Side Floating Supply Voltage 1200 V  Under Voltage Lockout Function  3.
3 V and 5.
0 V Input Logic Compatible (Note 1) Grade 1 Package SSOP-B20W W(Typ) x D(Typ) x H(Max) 6.
50 mm x 8.
10 mm x 2.
01 mm Applications  MOSFET Gate Driver  IGBT Gate Driver Typical Application Circuit VCCB ENA INA INB CVCCB GND1 ENA INA INB VREG CVREG VCCB OUTBH OUTBL PGND GND1 UVLO Pulse Generator Regulator Predriver S Q R UVLO Predriver SSOP-B20W NC GND2 NC VCCA OUTAH OUTAL NC NC GND2 NC Pin 1 Up to 1200 V CVCCA TO LOAD Product structure : Silicon integrated circuit This product has no designed protection against radioactive rays www.
rohm.
com © 2018 ROHM Co.
, Ltd.
All rights reserved.
TSZ22111 • 14 • 001 1/22 TSZ02201-0818ACH00050-1-2 26.
Oct.
2018 Rev.
001 BM60213FV-C Contents General Description 1 Features 1 Applications 1 Key Specifications...

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BM60213FV-C High and Low Side Driver - ROHM

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