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TP65H070LDG

Part Number	TP65H070LDG
Manufacturer	Transphorm
Description	650V GaN FET
Published	Aug 10, 2020
Detailed Description	TP65H070L Series 650V GaN FET PQFN Series Preliminary Description The TP65H070L 650V, 72mΩ Gallium Nitride (GaN) FET ...
Datasheet	TP65H070LDG PDF File

Overview

TP65H070L Series 650V GaN FET PQFN Series Preliminary Description The TP65H070L 650V, 72mΩ Gallium Nitride (GaN) FET are normally-off devices.
It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
Related Literature  AN0009: Recommended External Circuitry for GaN FETs  AN0003: Printed Circuit Board Layout and Probing  AN0010: Paralleling GaN FETs Ordering Information Part Number Package TP65H070LDG TP65H070LSG 8 x 8mm PQFN 8 x 8mm PQFN Package Configurat...

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