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TP65H050BS

Transphorm
Part Number TP65H050BS
Manufacturer Transphorm
Description GaN FET
Published Aug 10, 2020
Detailed Description TP65H050BS 650V GaN FET in TO-263 (source tab) Preliminary Datasheet Description The TP65H050BS 650V, 50mΩ Gallium Ni...
Datasheet PDF File TP65H050BS PDF File

TP65H050BS
TP65H050BS

Overview
TP65H050BS 650V GaN FET in TO-263 (source tab) Preliminary Datasheet Description The TP65H050BS 650V, 50mΩ Gallium Nitride (GaN) FET is a normally-off device.
It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
Related Literature  AN0009: Recommended External Circuitry for GaN FETs  AN0003: Printed Circuit Board Layout and Probing  AN0010: Paralleling GaN FETs Ordering Information Part Number Package TP65H050BS TO-263 Package Configuration Common Sourc...


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