DatasheetsPDF.com

GTVA104001FA

Part Number	GTVA104001FA
Manufacturer	Wolfspeed
Description	High Power RF GaN
Published	Aug 11, 2020
Detailed Description	GTVA104001FA Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 50 V, DC - 1.4 GHz Description The GTVA104001FA is...
Datasheet	GTVA104001FA PDF File

Overview

GTVA104001FA Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 50 V, DC - 1.
4 GHz Description The GTVA104001FA is a 400-watt GaN on SiC high electron mobility transistor (HEMT) for use in the DC - 1.
4 GHz frequecy band.
It features input matching, high efficiency, and a thermally-enhanced surface-mount package with earless flange.
Gain (dB) Performance at 1% Duty Cycle VDS = 50 V, IDQ = 100 mA, 128 µs–1%, Tflange = 25°C 23 ergoqhgorgn' 2q2pjgfq4po5g 21 20 960 MHz 19 1030 MHz 1150 MHz 18 1215 MHz 1090 MHz 17 g104001fa-gr1 0 50 100 150 200 250 300 350 400 450 500 Output Power (W) GTVA104001FA Package H-37265J-2 Features • GaN on SiC HEMT technology • Input matched • Typical pulsed CW performance: pulse width = 128 μs, duty cycle = 10%, DC - 1.
4 GHz, VDS = 50 V, IDQ = 100 mA - Output power = 400 W - Drain Efficiency = 70 % - Gain = 19 dB • Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001) • Capable of handling 10:1 VSWR (all phase angles) at VDS = 50 V, IDQ = 1...

Similar Datasheet

GTVA104001FA High Power RF GaN - Wolfspeed

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)