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STGWA50HP65FB2

STMicroelectronics
Part Number STGWA50HP65FB2
Manufacturer STMicroelectronics
Description IGBT
Published Aug 11, 2020
Detailed Description STGWA50HP65FB2 Datasheet Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO-247 long leads package ...
Datasheet PDF File STGWA50HP65FB2 PDF File

STGWA50HP65FB2
STGWA50HP65FB2

Overview
STGWA50HP65FB2 Datasheet Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO-247 long leads package G(1) C(2, TAB) Features • Maximum junction temperature : TJ = 175 °C • Low VCE(sat) = 1.
55 V(typ.
) @ IC = 50 A • Co-packaged protection diode • Minimized tail current • Tight parameter distribution • Low thermal resistance • Positive VCE(sat) temperature coefficient Applications • Welding • Power factor correction Description E(3) The newest IGBT 650 V HB2 series represents an evolution of the advanced NG1E3C2T proprietary trench gate field-stop structure.
The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at ...


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