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HBC114YS6R

CYStech Electronics
Part Number HBC114YS6R
Manufacturer CYStech Electronics
Description Dual NPN Digital Transistor
Published Aug 20, 2020
Detailed Description CYStech Electronics Corp. Dual NPN Digital Transistors HBC114YS6R Spec. No. : C355S6R Issued Date : 2003.05.23 Revised ...
Datasheet PDF File HBC114YS6R PDF File

HBC114YS6R
HBC114YS6R

Overview
CYStech Electronics Corp.
Dual NPN Digital Transistors HBC114YS6R Spec.
No.
: C355S6R Issued Date : 2003.
05.
23 Revised Date : 2011.
02.
22 Page No.
: 1/6 Features •Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
•The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.
•Only the on/off conditions need to be set for operation, making device design easy.
•Two DTC114Y chips in a SOT-363 package.
•Mounting by SOT-323 automatic mounting machines is possible.
•Mounting cost and area can be cut in half.
•Transistor elements are independent, eliminating interference.
•Complements the HBA114YS6R.
•Pb-free package.
Equivalent Circuit HBC114YS6R RBE2 RB2 TR1 TR2 RB1 RBE1 RB1=10kΩ , RB2=10 kΩ RBE1=47kΩ , RBE2=47 kΩ Outline SOT-363R HBC114YS6R CYStek Product Specification CYStech Electronics Corp.
Absolute Maximum Ratings (Each Transistor, Ta=25℃) Spec.
No.
: C355S6R Issued Date : 2003.
05.
23 Revised Date : 2011.
02.
22 Page No.
: 2/6 Parameter Supply Voltage Input Voltage Output Current Power Dissipation Junction Temperature Storage Temperature Symbol VCC VIN IO IO(max.
) Pd Tj Tstg Limits Unit 50 V -6~+40 V 70 mA 100 mA 200 (Note) mW 150 °C -55~+150 °C Note: 150mW per element must not be exceeded.
Electrical Characteristics (Each Transistor, Ta=25℃) Parameter Input Voltage Output Voltage Input Current Output Current DC Current Gain Input Resistance Resistance Ratio Transition Frequency Symbol VI(off) VI(on) VO(on) II IO(off) GI R1 R2/R1 fT Min.
3 68 7 3.
7 - Typ.
Max.
Unit Test Conditions - 0.
3 V VCC=5V, IO=100μA - - V VO=0.
3V, IO=1mA 0.
1 0.
3 V IO/II=5mA/0.
25mA - 0.
88 mA VI=5V - 0.
5 μA VCC=50V, VI=0V - - - VO=5V, IO=5mA 10 13 kΩ - 4.
7 5.
7 - - 250 - MHz VCE=10V, IC=5mA, f =100MHz * * Transition frequency...


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