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NEM0899F01-30

NEC
Part Number NEM0899F01-30
Manufacturer NEC
Description N-Channel MOSFET
Published Aug 25, 2020
Detailed Description High Power N-Channel Silicon MOSFET For Broadcast / Transmitters NEM0899F01-30 FEATURES • HIGH OUTPUT POWER: 100 Watts ...
Datasheet PDF File NEM0899F01-30 PDF File

NEM0899F01-30
NEM0899F01-30

Overview
High Power N-Channel Silicon MOSFET For Broadcast / Transmitters NEM0899F01-30 FEATURES • HIGH OUTPUT POWER: 100 Watts • HIGH GAIN: Linear Gain = 12 dB • LOW INTERMODULATION DISTORTION • HIGH DYNAMIC RANGE • HIGH EFFICIENCY: ηD = 53% • INTERNALLY MATCHED FOR THE 470-860 MHz BAND • PUSH-PULL STRUCTURE DESCRIPTION The NEM0899F01-30 is a high power enhancement mode Silicon MOSFET.
Its design employs a vertical geometry for high drain to source breakdown voltage, a 1.
3 mm x 28.
8 mm gate, a gold metallization system, and a plasma silicon nitride layer on the surface of the transistor for long life and reliable operation.
The NEM0899F01-30 uses two chips in a pushpull configuration and internal i...


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