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NE5500179A

NEC
Part Number NE5500179A
Manufacturer NEC
Description OPERATION SILICON RF POWER MOSFET
Published Aug 25, 2020
Detailed Description 4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND NE5500179A GSM1900 TRANSMISSION AMPLIFIERS FEATURES • HIGH OUTP...
Datasheet PDF File NE5500179A PDF File

NE5500179A
NE5500179A

Overview
4.
8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND NE5500179A GSM1900 TRANSMISSION AMPLIFIERS FEATURES • HIGH OUTPUT POWER: 29.
5 dBm TYP at VDS = 4.
8 V, IDQ = 100 mA, f = 1.
9 GHz, PIN = 20 dBm • HIGH POWER ADDED EFFICIENCY: 55% TYP at VDS = 4.
8 V, IDQ = 100 mA, f = 1.
9 GHz, PIN = 20 dBm • HIGH LINEAR GAIN: 14 dB TYP at VDS = 4.
8 V, IDQ = 100 mA, f = 1.
9 GHz, PIN = 0 dBm • SURFACE MOUNT PACKAGE: 5.
7 x 5.
7 x 1.
1 mm MAX • SINGLE SUPPLY: 3.
0 to 6.
0 V OUTLINE DIMENSIONS (Units in mm) Gate PACKAGE OUTLINE 79A 4.
2 Max Source Drain Gate 1.
5 ± 0.
2 Source Drain 1.
2 Max 0.
8 ± 0.
15 4.
4 Max 1.
0 Max 5.
7 Max 0.
6 ± 0.
15 0.
4 ± 0.
15 5.
7 Max 0.
8 Max 3.
6 ± 0.
2 Bottom View 0.
2 ± 0.
1 0.
9 ± 0.
2 DESCRIPTION The NE5500179A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 4.
8 V GSM1800 and GSM1900 handsets.
Dies are manufactured using NEC's NEWMOS technology (NEC's 0.
6 µm WSi gate lateral MOSFET) and housed in a surface mount package.
This device can deliver 29.
5 dBm output power with 55% power added efficiency at 1.
9 GHz under the 4.
8 V supply voltage, or can deliver 27 dBm output power with 50% power added efficiency at 3.
5 V by varying the gate voltage as a power control function.
APPLICATIONS • DIGITAL CELLULAR PHONES • DIGITAL CORDLESS PHONES • OTHERS ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS CHARACTERISTICS UNITS MIN IGSS Gate to Source Leakage Current nA - IDSS Drain to Source Leakage Current nA - VTH Gate Threshold Voltage V 1.
0 gm Transconductance S - RDS(ON) Drain to Source On Resistance - - BVDSS Drain to Source Breakdown Voltage V 20 TYP - 1.
35 0.
41 1.
00 24 NE5500179A 79A MAX TEST CONDITIONS 100 VGSS = 6.
0 V 100 VDSS = 8.
5 V 2.
0 VDS = 4.
8 V, IDS = 1 mA - VDS = 4.
8 V, IDS1 = 150 mA, IDS2 = 250 mA - VGS = 6.
0 V, VDS = 0.
5 V - IDSS = 10 A California Eastern Laboratories NE5500179A PERFORMANCE SPECIFICATIONS (Peak measurement at Duty Cy...


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