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NE6510179A

CEL
Part Number NE6510179A
Manufacturer CEL
Description MEDIUM POWER GaAs HJ-FET
Published Aug 25, 2020
Detailed Description FunctionalONTINUED Characteristics NEC's 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE6510179A FEATURES • LOW COST PLASTIC...
Datasheet PDF File NE6510179A PDF File

NE6510179A
NE6510179A

Overview
FunctionalONTINUED Characteristics NEC's 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE6510179A FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel • USABLE TO 3.
7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000, PCS • HIGH OUTPUT POWER: 35 dBm TYP with 5.
0 V Vdc 32.
5 dBm TYP with 3.
5 V Vdc • HIGH LINEAR GAIN: 10 dB TYP at 1.
9 GHz • LOW THERMAL RESISTANCE: 5°C/W DESCRIPTION NEC's NE6510179A is a GaAs HJ-FET designed for medium power mobile communications, Fixed Wireless Access, ISM, WLL, PCS, IMT-2000, and MMDS transmitter and subscriber applications.
It is capable of delivering 1.
8 watts of output power(C/W) at 3.
5 V and 3 Watts of ouptut power (CW) at 5 V with high linear gain, high efficiency, and excellent linearity.
Reliability and performance uniformity are assured by NEC's stringent quality and control procedures.
OUTLINE DIMENSIONS (Units in mm) Gate PACKAGE OUTLINE 79A 4.
2 MAX Source Drain Gate 1.
5 – 0.
2 Source Drain 1.
2 MAX 5.
7 MAX 0.
6 – 0.
15 TI 9X 0.
8 – 0.
15 4.
4 MAX 1.
0 MAX 0.
4 – 0.
15 5.
7 MAX 0.
8 MAX 3.
6 – 0.
2 0.
9 – 0.
2 0.
2 – 0.
1 BOTTOM VIEW Note: Unless otherwise specified, tolerance is ±0.
2 mm ELECTRICAL CHARACTERISTICS (TC = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS CHARACTERISTICS POUT Output Power GL ηADD Linear Gain1 Power Added Efficiency ID Drain Current IDSS Saturated Drain Current VP Pinch-Off Voltage RTH Thermal Resistance UNITS dBm dB % A A V °C/W NE6510179A 79A MIN TYP MAX 31.
5 32.
5 10.
0 50 58 0.
72 2.
4 -2.
0 -0.
4 5 8 TEST CONDITIONS f = 1900 MHz, VDS = 3.
5 V, Pin = +25 dBm, Rg = 100 Ω IDSQ = 200 mA (RF OFF)2 VDS = 2.
5 V; VGS = 0 V VDS = 2.
5 V; ID = 14 mA Channel to Case BVGD Gate to Drain Breakdown Voltage V 12 IGD = 14 mA Notes: 1.
Pin = 0 dBm 2.
DC performance is tested 100% .
Several samples per wafer are tested for RF performance.
Wafer rejection criteria for standard devices is 1 reject for several samples.
Electrical DIS DC C Characteristics California East...


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