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EPC1007

EPC
Part Number EPC1007
Manufacturer EPC
Description Power Transistor
Published Aug 30, 2020
Detailed Description DATASHEET EPC1007 – Enhancement Mode Power Transistor VDSS , 100 V RDS(ON) , 30 mW ID , 6 A EPC1007 EFFICIENT POWER CON...
Datasheet PDF File EPC1007 PDF File

EPC1007
EPC1007

Overview
DATASHEET EPC1007 – Enhancement Mode Power Transistor VDSS , 100 V RDS(ON) , 30 mW ID , 6 A EPC1007 EFFICIENT POWER CONVERSION Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years.
GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR.
The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
Maximum Ratings VDS Drain-to-Source Voltage 100 V ID Continuous (TA = 25˚C, θJA = 90) 6 A Pulsed (25˚C, Tpulse = 300 µs) 25 Gate-to-Source Voltage VGS Gate-to-Source Voltage 6 V -5 TJ Operating Temperature TSTG Storage Temperature -40 to 125 ˚C -40 to 150 PARAMETER TEST CONDITIONS MIN Static Characteristics (TJ= 25˚C unless otherwise stated) BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 75 µA 100 IDSS Drain Source Leakage VDS = 80 V, VGS = 0 V Gate-Source Forward Leakage IGSS Gate-Source Reverse Leakage VGS = 5 V VGS = -5 V VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1.
2 mA 0.
7 RDS(ON) Drain-Source On Resistance VGS = 5 V, ID = 6 A Dynamic Characteristics (TJ= 25˚C unless otherwise stated) CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance QG Total Gate Charge (VGS = 5 V) QGD Gate-to-drain Charge QGS Gate-to Source Charge QOSS Output Charge QRR Source-Drain Recovery Charge VDS = 50 V, VGS = 0 V VDS = 50 V, ID = 6 A Source-Drain Characteristics (TJ= 25˚C unless otherwise stated) VSD Source-Drain Forward Voltage IS = 0.
5 A, VGS = 0 V, T = 25˚C IS = 0.
5 A, VGS = 0 V, T = 125˚C EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.
EPC-CO.
COM | COPYRIGHT 2011 | EPC Power Transistors are supplied only in passivated die form with so...


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