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SPP11N80C3

INCHANGE
Part Number SPP11N80C3
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Sep 2, 2020
Detailed Description Isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPP11N80C3 ·FEATURES ·Ultra low effective capacitances ·Low gat...
Datasheet PDF File SPP11N80C3 PDF File

SPP11N80C3
SPP11N80C3

Overview
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPP11N80C3 ·FEATURES ·Ultra low effective capacitances ·Low gate charge ·Improved transconductance ·Low gate drive power loss ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±20 11 7.
1 33 PD Total Dissipation 156 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMB...


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