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STB24NM60N

INCHANGE
Part Number STB24NM60N
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Sep 2, 2020
Detailed Description Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STB24NM60N ·FEATURES ·With To-263(D2PAK) package ·Low input cap...
Datasheet PDF File STB24NM60N PDF File

STB24NM60N
STB24NM60N

Overview
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STB24NM60N ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=125℃ Drain Current-Single Pulsed ±30 17 11 68 PD Total Dissipation @TC=25℃ 125 Tch Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 1 30 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STB24NM60N ELECTRICAL CHARACTERISTICS TC=25...


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