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STB75NF75T4

INCHANGE
Part Number STB75NF75T4
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Sep 2, 2020
Detailed Description Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STB75NF75T4 ·FEATURES ·With To-263(D2PAK) package ·Excellent sw...
Datasheet PDF File STB75NF75T4 PDF File

STB75NF75T4
STB75NF75T4

Overview
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STB75NF75T4 ·FEATURES ·With To-263(D2PAK) package ·Excellent switching performance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 75 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ （ TJ=175℃） TC=125℃ Drain Current-Single Pulsed ±20 80 70 320 PD Total Dissipation @TC=25℃ 300 Tch Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 2.
14 100 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STB75NF75T4 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 0.
25mA 75 V VGS(th) Gate Threshold Voltage VDS= ±20V; ID=0.
25mA 2 4 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=40A 9.
5 11 mΩ IGSS IDSS VSDF Gate-Source Leakage Current VGS= ±20V;VDS= 0V Drain-Source Leakage Current VDS= 75V; VGS= 0V；TJ=25℃ TJ=125℃ Diode forward voltage ISD=80A, VGS = 0 V ±0.
1 μA 1 10 μA 1.
5 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Please contact us if you intend our...


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