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STD10NM60N

Part Number	STD10NM60N
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Sep 2, 2020
Detailed Description	Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STD10NM60N ·FEATURES ·With To-252(DPAK) package ·Low input capa...
Datasheet	STD10NM60N PDF File

Overview

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STD10NM60N ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ （ TJ=175℃） TC=125℃ Drain Current-Single Pulsed ±25 10 5 32 PD Total Dissipation @TC=25℃ 70 Tch Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERIST...

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