DatasheetsPDF.com

25N10

Part Number	25N10
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Sep 2, 2020
Detailed Description	isc N-Channel MOSFET Transistor INCHANGE Semiconductor 25N10 ·FEATURES ·With TO-252(DPAK) packaging ·High speed switch...
Datasheet	25N10 PDF File

Overview

isc N-Channel MOSFET Transistor INCHANGE Semiconductor 25N10 ·FEATURES ·With TO-252(DPAK) packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 23 14.
6 80 PD Total Dissipation 41 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 3.
0 100 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor 25N10 ELECTRICAL CHARACTERISTICS TC=25℃...

Similar Datasheet

25N01GVSFIG 3V 1G-BIT SERIAL SLC NAND FLASH MEMORY - Winbond
25N01GVSFIT 3V 1G-BIT SERIAL SLC NAND FLASH MEMORY - Winbond
25N01GVTBIG 3V 1G-BIT SERIAL SLC NAND FLASH MEMORY - Winbond
25N01GVTBIT 3V 1G-BIT SERIAL SLC NAND FLASH MEMORY - Winbond
25N01GVTCIG 3V 1G-BIT SERIAL SLC NAND FLASH MEMORY - Winbond
25N01GVTCIT 3V 1G-BIT SERIAL SLC NAND FLASH MEMORY - Winbond
25N01GVZEIG 3V 1G-BIT SERIAL SLC NAND FLASH MEMORY - Winbond
25N01GVZEIT 3V 1G-BIT SERIAL SLC NAND FLASH MEMORY - Winbond
25N05 N-Channel MOSFET - Inchange Semiconductor
25N06 N-Channel MOSFET - Inchange Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)