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FMW30N60S1HF

Fuji Electric
Part Number FMW30N60S1HF
Manufacturer Fuji Electric
Description N-CHANNEL SILICON POWER MOSFET
Published Sep 3, 2020
Detailed Description FMW30N60S1HF http://www.fujielectric.com/products/semiconductor/ FUJI POWER MOSFET Super J-MOS series N-Channel enhan...
Datasheet PDF File FMW30N60S1HF PDF File

FMW30N60S1HF
FMW30N60S1HF

Overview
FMW30N60S1HF http://www.
fujielectric.
com/products/semiconductor/ FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Pb-free lead terminal RoHS compliant uses Halogen-free molding compound Applications For switching Outline Drawings [mm] TO-247 ①② ③ ①② ③ CONNECTION ① GATE ② DRAIN ③ SOURCE DIMENSIONS ARE IN MILLIMETERS.
Absolute Maximum Ratings at TC=25°C (unless otherwise specified) Parameter Drain-Source Voltage Symbol VDS VDSX Continuous Drain Current ID Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt IDP VGS IAR EAS dVDS/dt dV/dt -di/dt Maximum Power Dissipation PD Tch Operating and Storage Temperature range Tstg Note *1 : Limited by maximum channel temperature.
Note *2 : Tch≤150°C, See Fig.
1 and Fig.
2 Note *3 : Starting Tch=25°C, IAS=4A, L=97.
3mH, VDD=60V, RG=50Ω, See Fig.
1 and Fig.
2 EAS limited by maximum channel temperature and avalanche current.
Note *4 : IF≤-ID, -di/dt=100A/μs, VDD≤400V, Tch≤150°C.
Note *5 : IF≤-ID, dV/dt=12kV/μs, VDD≤400V, Tch≤150°C.
Characteristics 600 600 ±30 ±19 ±90 ±30 6.
6 849.
2 50 12 100 2.
5 220 150 -55 to +150 Electrical Characteristics at TC=25°C (unless otherwise specified) • Static Ratings Parameter Symbol Conditions Drain-Source Breakdown Voltage Gate Threshold Voltage BVDSS VGS(th) Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Current IGSS Drain-Source On-State Resistance Gate resistance RDS(on) RG ID=250μA VGS=0V ID=250μA VDS=VGS VDS=600V VGS=0V VDS=480V VGS=0V VGS= ± 30V VDS=0V ID=15A VGS=10V f=1MHz, open drain Tch=25°C Tch=125°C min.
600 2.
5 - Equivalent circuit schematic ②Drain ①②③ ① Gate ③Source Unit V V A A A V A mJ kV/μs kV/μs A/μs W °C °C Remarks VGS=-30V Tc=25°C Note*1 Tc=100°C Note*1 Note *2 Note *3 VDS≤ 600V Note *4 Note *5 Ta=25°C TC=25°C typ.
- 3.
0 10 0.
106 3.
2 ...


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