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IPA65R110CFD

INCHANGE
Part Number IPA65R110CFD
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Sep 3, 2020
Detailed Description Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPA65R110CFD ·FEATURES ·With TO-220F package ·Low input capacit...
Datasheet PDF File IPA65R110CFD PDF File

IPA65R110CFD
IPA65R110CFD

Overview
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPA65R110CFD ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous @Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 31.
2 19.
7 99.
6 PD Total Dissipation @TC=25℃ 277.
8 Tch Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 3.
6 80 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPA65R110CFD ELECTRICAL CHARACTERIST...


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