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IPA083N10N5

INCHANGE
Part Number IPA083N10N5
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Sep 3, 2020
Detailed Description Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPA083N10N5 ·FEATURES ·With To-220F package ·Low input capacita...
Datasheet PDF File IPA083N10N5 PDF File

IPA083N10N5
IPA083N10N5

Overview
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPA083N10N5 ·FEATURES ·With To-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±20 44 32 176 PD Total Dissipation @TC=25℃ 36 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 4.
1 62.
5 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPA083N10N5 ELECTRICAL CHARACTERISTICS TC=25℃...


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