DatasheetsPDF.com

IPD60R380E6

INCHANGE
Part Number IPD60R380E6
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Sep 3, 2020
Detailed Description isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPD60R380E6 ·FEATURES ·With TO-252(DPAK) packaging ·With low ga...
Datasheet PDF File IPD60R380E6 PDF File

IPD60R380E6
IPD60R380E6

Overview
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPD60R380E6 ·FEATURES ·With TO-252(DPAK) packaging ·With low gate drive requirements ·Very high commutation ruggedness ·Extremely high frequency operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·LCD&PDP TV ·PC silverbox ·UPS and solar ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM PD Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed Total Dissipation ±20 10.
6 6.
7 30 83 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 1.
5 62 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transi...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)