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IPD088N06N3G

INCHANGE
Part Number IPD088N06N3G
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Sep 3, 2020
Detailed Description isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPD088N06N3G ·FEATURES ·With TO-252(DPAK) packaging ·With low g...
Datasheet PDF File IPD088N06N3G PDF File

IPD088N06N3G
IPD088N06N3G

Overview
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPD088N06N3G ·FEATURES ·With TO-252(DPAK) packaging ·With low gate drive requirements ·Very high commutation ruggedness ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·LCD&PDP TV ·PC silverbox ·UPS and solar ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±20 50 47 200 PD Total Dissipation 71 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 2.
1 62 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPD088...


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