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STP13NM60N

INCHANGE
Part Number STP13NM60N
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Sep 3, 2020
Detailed Description Isc N-Channel MOSFET Transistor ·FEATURES ·Typical RDS(on)=0.28Ω ·Low gate input resistance ·100% avalanche tested ·Low ...
Datasheet PDF File STP13NM60N PDF File

STP13NM60N
STP13NM60N

Overview
Isc N-Channel MOSFET Transistor ·FEATURES ·Typical RDS(on)=0.
28Ω ·Low gate input resistance ·100% avalanche tested ·Low input capacitance and gate charge ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications INCHANGE Semiconductor STP13NM60N ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±25 11 6.
93 44 PD Total Dissipation 25 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth...


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