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IXTA1N100P

INCHANGE
Part Number IXTA1N100P
Manufacturer INCHANGE
Description TO-263 N-Channel MOSFET
Published Sep 3, 2020
Detailed Description Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXTA1N100P ·FEATURES ·With To-263(D2PAK) package ·Low input cap...
Datasheet PDF File IXTA1N100P PDF File

IXTA1N100P
IXTA1N100P

Overview
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXTA1N100P ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 1000 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous 1.
0 IDM Drain Current-Single Pulsed 1.
8 PD Total Dissipation 50 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-...


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