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STP30NF10FP

INCHANGE
Part Number STP30NF10FP
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Sep 3, 2020
Detailed Description Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP30NF10FP ·FEATURES ·Typical RDS(on)=0.038Ω ·Application orie...
Datasheet PDF File STP30NF10FP PDF File

STP30NF10FP
STP30NF10FP

Overview
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP30NF10FP ·FEATURES ·Typical RDS(on)=0.
038Ω ·Application oriented characterization ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High-efficiency DC-DC coverters ·Motor control ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±20 18 13 72 PD Total Dissipation 30 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 5 62.
5 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP30NF10FP ELECTRICAL CHARACTERISTICS TC=...


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