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MMF60R580P

INCHANGE
Part Number MMF60R580P
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Sep 4, 2020
Detailed Description Isc N-Channel MOSFET Transistor INCHANGE Semiconductor MMF60R580P ·FEATURES ·Low power loss ·High speed switching ·Low...
Datasheet PDF File MMF60R580P PDF File

MMF60R580P
MMF60R580P

Overview
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor MMF60R580P ·FEATURES ·Low power loss ·High speed switching ·Low on-resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·Motor control ·DC – DC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±30 8 5 32 PD Total Dissipation 26 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 4.
8 62.
5 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor INCHANGE Semiconductor MMF60R580P ELECTRICAL CHARACTERISTICS TC=25℃ unless ot...


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