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MTP3N50E

ON Semiconductor
Part Number MTP3N50E
Manufacturer ON Semiconductor
Description TMOS E-FET
Published Sep 4, 2020
Detailed Description MTP3N50E Designer’s™ Data Sheet TMOS E−FET.™ High Energy Power FET N−Channel Enhancement−Mode Silicon Gate This advanced...
Datasheet PDF File MTP3N50E PDF File

MTP3N50E
MTP3N50E


Overview
MTP3N50E Designer’s™ Data Sheet TMOS E−FET.
™ High Energy Power FET N−Channel Enhancement−Mode Silicon Gate This advanced high voltage TMOS E−FET is designed to withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain−to−source diode with fast recovery time.
Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
• Avalanche Energy Capability Specified at Elevated Temperature • Low Stored Gate Charge for Efficient Switching • Internal Source−to−Drain Diode Designed to Replace External Zener Transient Suppressor — Absorbs High Energy in the Avalanche Mode • Source−to−Drain Diode Recovery Time Comparable to Discrete Fast Recovery Diode http://onsemi.
com TMOS POWER FET 3.
0 AMPERES, 500 VOLTS RDS(on) = 3.
0 W TO−220AB CASE 221A−06 Style 5 D ®G S © Semiconductor Components Industries, LLC, 2006 1 August, 2006 − Rev.
2 Publication Order Number: MTP3N50E/D MTP3N50E MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−Source Voltage Drain−Gate Voltage (RGS = 1.
0 MΩ) Gate−Source Voltage — Continuous Gate−Source Voltage — Non−repetitive (tp ≤ 50 μs) VDSS VDGR VGS VGSM 500 Vdc 500 Vdc ± 20 Vdc ± 40 Vpk Drain Current — Continuous Drain Current — Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C ID 3.
0 Adc IDM 10 PD 50 Watts 0.
4 W/°C Operating and Storage Temperature Range TJ, Tstg −65 to 150 °C UNCLAMPED DRAIN−TO−SOURCE AVALANCHE CHARACTERISTICS (TJ < 150°C) Single Pulse Drain−to−Source Avalanche Energy — TJ = 25°C Single Pulse Drain−to−Source Avalanche Energy — TJ = 100°C Repetitive Pulse Drain−to−Source Avalanche Energy WDSR (1) 210 mJ 33 WDSR (2) 5.
0 THERMAL CHARACTERISTICS ...


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