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SiHA11N80E

INCHANGE
Part Number SiHA11N80E
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Sep 4, 2020
Detailed Description Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input r...
Datasheet PDF File SiHA11N80E PDF File

SiHA11N80E
SiHA11N80E

Overview
Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications INCHANGE Semiconductor SiHA11N80E ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ Drain Current-Single Pulsed ±30 12 8 32 PD Total Dissipation @TC=25℃ 34 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT...


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