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2N3772J

Part Number	2N3772J
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 4, 2020
Detailed Description	isc Silicon NPN Power Transistor 2N3772J DESCRIPTION ·J:High DC Current Gain-hFE:100-150@IC = 10A ·Low Saturation Volt...
Datasheet	2N3772J PDF File

Overview

isc Silicon NPN Power Transistor 2N3772J DESCRIPTION ·J:High DC Current Gain-hFE:100-150@IC = 10A ·Low Saturation Voltage- : VCE(sat)= 1.
4V(Max)@ IC = 10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for linear amplifiers, series pass regulators, and inductive switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 20 A ICM Collector Current-Peak 30 A IB Base Current-Continuous 5 A PC Collector Power Dissipation @TC=25℃ 150 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.
17 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS ...

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