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2SA1307

Part Number	2SA1307
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 5, 2020
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max.)@IC= -3A ·High S...
Datasheet	2SA1307 PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.
4V(Max.
)@IC= -3A ·High Switching Speed ·Complement to Type 2SC3299 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for high current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -1 A 2 W 20 150 ℃ Tstg Storag...

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