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2ST31A

INCHANGE
Part Number 2ST31A
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 5, 2020
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter sustaining Voltage : VCEO=60V(Min) ·Good Linearity of h...
Datasheet PDF File 2ST31A PDF File

2ST31A
2ST31A

Overview
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter sustaining Voltage : VCEO=60V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Linear and switching industrial applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A IB Base Current- Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 40 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2ST31A isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(sus) Collector-Emitter Breakdown Voltage IC=30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 375mA VBE(sat) Base-Emitter Satu...


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