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3CD9B

Part Number	3CD9B
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 5, 2020
Detailed Description	isc Silicon PNP Power Transistors INCHANGE Semiconductor 3CD9B DESCRIPTION ·With TO-3 packaging ·Large collector curre...
Datasheet	3CD9B PDF File

Overview

isc Silicon PNP Power Transistors INCHANGE Semiconductor 3CD9B DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous -15 A PC Collector Power Dissipation@Tc=75℃ 150 W TJ Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL C...

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