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3CD9F

Part Number	3CD9F
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 5, 2020
Detailed Description	isc Silicon PNP Power Transistors DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max.)@ IC= -7.5A ·DC...
Datasheet	3CD9F PDF File

Overview

isc Silicon PNP Power Transistors DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -1.
5V(Max.
)@ IC= -7.
5A ·DC Current Gain- : hFE=15-120@IC= -7.
5A,，VCE=-5V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A PC Collector Power Dissipation 150 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ T...

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